By E.R. Weber (Eds.)
This new quantity makes a speciality of a brand new, interesting box of study: Spintronics, the world often referred to as spin-based electronics. the last word objective of researchers during this region is to increase new units which take advantage of the spin of an electron rather than, or as well as, its digital cost. lately many teams around the world have committed large eforts to analyze of spintronic fabrics, from their know-how via characterization to modeling. the ensuing explosion of papers during this box and the bought clinical effects accomplished justify the e-book of this quantity. Its target is to summarize the present point of knowing and to spotlight a few key effects and milestones which have been accomplished so far. Semiconductor spintronics is anticipated to steer to a brand new iteration of transistors, lasers and built-in magnetic sensors that may be used to create ultra-low strength, excessive pace reminiscence, good judgment and photonic units. additionally, improvement of novel units corresponding to spin-polarized mild emitters, spin box impact transistors, built-in sensors and high-temperature electronics is expected. * Spintronics has emerged as one of many quickest turning out to be parts of analysis * this article provides an in-depth exam of the newest technological spintronic advancements * contains contributions from top students and specialists
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The interaction between neutral Mn acceptors has been treated using multi-band tight binding model of the Mn acceptor wave function (Tang and Flatte´, 2004). This model has successfully predicted the shape of the acceptor wave function as imaged via scanning tunneling microscopy (Fig. , 2006). Using this model, the mean field effect of all the Mn ions in the crystal can be calculated which contributes an additional spin splitting to the Mn spin states: s;pÀd DEMn ¼ DEMn þ lh JMn i ð1:7Þ where l is the Weiss molecular field due to neighboring Mn ions and h JMni is the projection of angular momentum of the Mn ion along the magnetic field.
3. 4. 5. Numerical studies of the spin Hall accumulation and SHE 5. 1. 1016/S0080-8784(08)00002-1 # 2008 Elsevier Inc. All rights reserved. 45 46 Jairo Sinova and A. H. MacDonald 1. INTRODUCTION Spin–orbit coupling is ubiquitous in the physics of semiconductor spintronics. It is one of the few echos from relativistic physics emerging in the field of condensed matter physics, governed for the most part by nonrelativistic physics and low energies. Many studies in metallic spintronics have centered around the injection and generation of spin via optical and transport injection and external magnetic field manipulation.
Middle panel: Overlap jaj2 for each spin level with j0i at the same two angles. (C) IPL versus magnetic field at several angles for NV1. (D) Close-up of the data for B near 1000 G (points) for several angles along with fits (lines) to the model described in the text. (E) IPL versus magnetic field at several angles (points) for NV4, along with fits (lines). This figure is modified from Epstein et al. (2005). Maiken H. Mikkelsen et al. A Single Spin Coherence in Semiconductors 33 measurements are made under continuous illumination.
A Treatise by E.R. Weber (Eds.)